? 1997 ixys all rights reserved 96539a (05/97) features l international standard package l guaranteed short circuit soa capability l low v ce(sat) - for low on-state conduction losses l high current handling capability l mos gate turn-on - drive simplicity l fast fall time for switching speeds up to 20 khz applications l ac motor speed control l uninterruptible power supplies (ups) l welding advantages l high power density g e tab v ces = 600v i c25 = 16a v ce(sat)typ = 1.8v ixsa 16N60 ixsp 16N60 low v ce(sat) igbt short circuit soa capability symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m w 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c32a i c90 t c = 90 c16a i cm t c = 25 c, 1 ms 52 a ssoa v ge = 15 v, t j = 125 c, r g = 150 w i cm = 32 a (rbsoa) clamped inductive load, l = 300 m h @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 5 m s (scsoa) r g = 82 w, non repetitive p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c weight 2 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering for 10s 260 c g = gate, c = collector, e = emitter, tab = collector to-263aa symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 m a, v ge = 0 v 600 v v ge(th) i c = 750 m a, v ce = v ge 3.5 6.5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 m a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.8 2.3 v preliminary data sheet g c e to-220ab(ixsp) free datasheet http://
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixsa16N60 ixsp16N60 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 3.3 5.0 s pulse test, t 300 m s, duty cycle 2 % i c(on) v ge = 15 v, v ce = 10 v 50 a c ies 920 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 65 pf c res 14 pf q g 40 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 18 nc t d(on) 30 ns t ri 30 ns t d(off) 100 420 ns t fi 310 470 ns e off 1.9 2.9 mj t d(on) 30 ns t ri 30 ns e on 0.12 mj t d(off) 150 ns t fi 510 ns e off 3.0 mj r thjc 1.25 k/w note 1: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 25 c i c = 16a, v ge = 15 v, l = 300 m h v ce = 0.8 v ces , r g = 22 w dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side (dimensions in inches and (mm)) min. recommended footprint inductive load, t j = 125 c i c = 16a, v ge = 15 v, l = 300 m h v ce = 0.8 v ces , r g = 22 w dim. millimeter inches min. max. min. max. a 12.70 14.93 0.500 0.580 b 14.23 16.50 0.560 0.650 c 9.66 10.66 0.380 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.29 2.79 0.090 0.110 g 1.15 1.77 0.045 0.070 h 2.79 6.35 0.110 0.250 j 0.64 0.89 0.025 0.035 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 0.64 1.39 0.025 0.055 q 0.51 0.76 0.020 0.030 r 2.04 2.49 0.080 0.115 to-220 ab outline free datasheet http://
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